View HAT2179R09_4456190.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HAT2179R
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1570-0200 Rev.2.00 Jul 17, 2009
Features
* Low on-resistance * Low drive current * High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
5 76 34 4 G 5678 DDDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
8
12
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note2 Pch Tch Tstg
Note1
Ratings 600 30 0.7 2.0 0.7 2.0 2.5 150 -55 to +150
Unit V V A A A A W C C
Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 1 of 6
HAT2179R
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 -- -- 3.0 0.8 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.2 3.5 280 31 3.8 24 15 50 58 10 1.6 5.4 0.8 200 Max -- 1 0.1 5.0 -- 4.5 -- -- -- -- -- -- -- -- -- -- 1.2 -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.4 A, VDS = 10 V Note3 ID = 0.4 A, VGS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.4 A VGS = 10 V RL = 750 Rg = 10 VDD = 480 V VGS = 10 V ID = 0.7 A IF = 0.7 A, VGS = 0 Note3 IF = 0.7 A, VGS = 0 diF/dt = 100 A/s
REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 2 of 6
HAT2179R
Main Characteristics
Maximum Safe Operation Area
10 2.0
Typical Output Characteristics
5.3 V
10 s
ID (A)
ID (A)
1
PW = 100 s
1.6
6V 10 V
5.5 V
0.1
1.2
Drain Current
Drain Current
VGS = 5 V
0.8
0.01
0.001
Operation in this area is limited by RDS(on) Ta = 25C 1 shot 1 10 100 1000
0.4 Ta = 25C Pulse Test 0 0 4 8 12 16 20
0.0001 0.1
Drain to Source Voltage
VDS (V)
Drain to Source Voltage
VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) ()
2.0 VDS = 10 V Pulse Test
10 VGS = 10 V Ta = 25C Pulse Test
ID (A) Drain Current
1.6
1.2
3
0.8 Tc = 75C 25C 0.4 -25C 0
0 2 4 6 8 10
1 0.1
1
10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance vs. Temperature (Typical)
10
Body-Drain Diode Reverse Recovery Time (Typical)
1000
8
ID = 1.4 A 0.7 A
6
Reverse Recovery Time trr (ns)
VGS = 10 V Pulse Test
100
4 0.4 A 2
di / dt = 100 A / s VGS = 0, Ta = 25C 10 0.1 1 10
0 -25
0
25
50
75
100
125 150
Case Temperature
Tc (C)
Reverse Drain Current IDR (A)
REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 3 of 6
HAT2179R
Typical Capacitance vs. Drain to Source Voltage
Dynamic Input Characteristics (Typical)
VDS (V)
VGS = 0 f = 1 MHz
Ta = 25C Ciss
ID = 0.7 A Ta = 25C 600 VDS 400
VGS 12 VDS = 100 V 300 V 480 V 8
Capacitance C (pF)
Drain to Source Voltage
Coss 10
200 VDS = 480 V 300 V 100 V 4 8 12 16
4
Crss 1 0 50 100 150 200 250 300
0 0
0 20
Drain to Source Voltage
VDS (V)
Gate Charge
Qg (nC)
1.0
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5 VDS = 10 V
Reverse Drain Current IDR (A)
0.8
VGS = 0 V Ta = 25 C Pulse Test
4 ID = 10 mA 1 mA 0.1 mA 2 1
0.6
3
0.4 0.2
0 0 0.2 0.4 0.6 0.8 1.0
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (C)
REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 4 of 6
Gate to Source Voltage
100
VGS (V)
1000
800
16
HAT2179R
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
ch - f (t) = s (t) * ch - f ch - f = 83.3C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM D= PW T 1m 10 m 100 m 1 10 100 1000 10000 PW T
0.001
1s
0.0001 10
t ho
pu
lse
100
Pulse Width PW (s) Switching Time Test Circuit Switching Time Waveform
Vin Monitor 10 D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDD = 300 V td(on)
90% tr
90% td(off) tf
REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 5 of 6
HAT2179R
Package Dimensions
Package Name SOP-8 JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
* 3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters Symbol
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
A
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
A1
y
Detail F
0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
Ordering Information
Part No. HAT2179R-EL-E Quantity 2500 pcs Taping Shipping Container
REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2

▲Up To Search▲

Price & Availability of HAT2179R09

	To Download HAT2179R09 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .